Author(s): Kuldeep Ray, Jérémie Vigier, Perrine Usé, Sylvain Martin, Nicolas Lefoulon, Chloé Bouard, Marc Drouard, and Gilles Gaudin The writing process of spin-orbit torque magnetic random-access memories (SOT-MRAMs) is considered deterministic when additional symmetry-breaking factors, such as the application of an external magnetic field aligned with the current, are present. Notably, the write probability exhibits a unique be… [Phys. Rev. Applied 24, 064038] Published Thu Dec 11, 2025