Intel and SoftBank subsidiary Saimemory have signed an agreement to work together on developing and selling Z-Angle Memory (ZAM) technology aimed at AI and high-performance computing tasks. ZAM is described as a stacked DRAM architecture designed to go beyond current high-bandwidth memory (HBM) solutions. The goal is higher memory capacity and bandwidth at lower power. The name refers to vertical (Z-axis) stacking, according to reports from EE Times Japan. The project builds on Intel Next Generation DRAM Bonding (NGDB) work, developed under the U.S. government-backed Advanced Memory Technology (AMT) program in collaboration with Sandia, Lawrence Livermore, and Los Alamos national laboratories. Recent NGDB prototypes featuring eight vertically stacked DRAM layers have demonstrated full functionality using this new vertical stacking and bonding approach, as disclosed by Sandia in January.

According to reports from Nikkei and Wallstreet.cn, Saimemory is targeting two to three times the capacity of today’s HBM, with 40-50% lower power consumption, while keeping costs competitive. Saimemory plans to have prototypes ready by early 2028, with commercial products following in 2029. SoftBank is said to be investing around ¥3 billion through the prototype phase. For Intel, the partnership marks a return to advanced memory technologies after exiting the DRAM market decades ago.