Dislocation-templated antiferromagnetic domains in epitaxial NiO (opens in new tab)

Controlling antiferromagnetic domains is essential for spintronics, yet deterministic manipulation remains challenging due to their lack of net magnetization. Here, we utilize scanning electron microscopy electron channeling contrast imaging (ECCI) to demonstrate a robust structural memory effect in epitaxial NiO/MgO(001), where antiferromagnetic twin-domain walls (DWs) are deterministically pinned at the nanoscale by interface dislocation netwo...