Challenges and prospects of 2D electronics for future monolithic complementary field-effect transistors (opens in new tab)

With planar complementary metal-oxide-semiconductor (CMOS) scaling nearing its physical limits, the transistor roadmap is transitioning toward monolithic three-dimensional (M3D) integration through complementary field-effect transistors (CFETs). While silicon (Si)-CFETs demonstrate the viability of monolithic stacking, their scalability is constrained by high thermal budgets, dopant diffusion, and alignment complexity. Two-dimensional (2D) materials offer atomically thin semiconducting channe...