All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths (opens in new tab)

Two-dimensional (2D) materials are promising candidates for next-generation nanoelectronics in the post-Moore era. However, simultaneously scaling the channel length (Lch) and contact length (Lc) in transition metal dichalcogenide-based field-effect transistors remains a challenge. Here, we introduce an all-2D vertical metal–semiconductor field-effect transistor featuring an MoS2 channel that contacts the sidewall of a graphene (source)–hBN (insulator)–graphene (drain)–hBN (insulator) heteros...