Nexperia has expanded its portfolio of application-specific MOSFETs (ASFETs) with features that meet specific application requirements. The new 80-V PSMN1R9-80SSJ and 100-V PSMN2R3-100SSJ MOSFETs have been designed to provide enhanced dynamic current sharing in high-power 48-V applications including motor drives in electric vehicles such as forklifts, e-scooters, and mobility devices, as well as high-power industrial motors. These applications require closely matched MOSFETs connected in parallel.

(Source: Nexperia)

The capability to connect multiple MOSFETs in parallel to support high current and reduced conduction losses and to ensure that the load current is equally shared during turn-on and turn off is a challenge, Nexperia said. First to turn on are MOSFETs with the lowest V_GS(th), which can cause higher thermal stress and accelerated failure.

As a result, engineers often take a more expensive and time-consuming approach, over-specifying the MOSFETs to provide a safety margin, Nexperia said, but this approach also requires additional testing, and there are no guarantees on device behavior at higher load currents.

Another option is to request tightly matched devices from a supplier, but this can increase the cost of an end application, the company added.

In comparison, the PSMN1R9-80SSJ and PSMN2R3-100SSJ ASFETs eliminate the need for these approaches by providing enhanced dynamic current sharing. The result is that switches offer a 50% lower current delta between parallel devices for currents up to 50 A per device at turn-on/off and a V_GS(th) window up to 50% lower (0.6 V min-to-max). This, combined with the low R_DS(on) of 1.9 mΩ or 2.3 mΩ, helps provide high efficiency in power switching applications, Nexperia said.

ASFETs with enhanced dynamic current sharing ensure balanced load distribution and reliable operation in BLDC and other demanding inductive systems. Since no V_GS(th) matching is required, both design and production is simplified, and the low R_DS(on) and a reduced V_GS(th) spread improve efficiency and performance.

The new ASFET devices are available in a rugged 8 × 8-mm copper-clip LFPAK88 package with an operating temperature range from -55°C to 175°C. These devices are avalanche rated.

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