News: Microelectronics
16 January 2025
Guerrilla RF unveils new GaN-on-SiC HEMT power amplifiers dice for high-performance RF
Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which develops and manufactures radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — has formally released the GRF0020D and GRF0030D, the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company. The unmatched discrete transistors provide up to 50W of saturated power for customers in the wireless infrastructure, military, aerospace and industrial heating markets looking to integrate bare die into their own custom MMICs.
Each device offers what is …
News: Microelectronics
16 January 2025
Guerrilla RF unveils new GaN-on-SiC HEMT power amplifiers dice for high-performance RF
Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which develops and manufactures radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — has formally released the GRF0020D and GRF0030D, the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company. The unmatched discrete transistors provide up to 50W of saturated power for customers in the wireless infrastructure, military, aerospace and industrial heating markets looking to integrate bare die into their own custom MMICs.
Each device offers what is claimed to be exceptional flexibility, supporting either 50V or 28V supply rails while spanning multiple octaves of operational bandwidth for continuous wave, linear and pulsed modulation schemes. When using a 50V rail, the GRF0030D is rated for 50W (PSAT) operation from DC to 6GHz, with gain varying from 13.5dB to 23.7dB. The device also supports 28V operation while delivering up to 27.5W of saturated output power. Similarly, the GRF0020D variant provides up to 30W and 19W of saturated power when using 50V and 28V rails, respectively. This slightly lower-power HEMT supports frequencies up to 7GHz while providing 13.8dB to 24.3dB of gain. As with all of Guerrilla RF’s bare die offerings, each device is 100% DC production tested to ensure KGD (known good die) compliance.
According to market research from Yole Group, the RF GaN device market is growing from $1.3bn in 2022 to $2.7bn by 2028. This growth is driven by expansion in key segments relevant to Guerrilla RF, including telecom infrastructure (5G and point-to-point systems), military and satellite communications, with projected compound annual growth rates of 10%, 13% and 18%, respectively. Additionally, GaN-on-SiC variants are expected to dominate the market for the next decade.
“GaN technology is critical for next-generation, high-performance, energy-efficient RF systems and devices. We’re already seeing strong demand for the GRF0020D and GRF0030D,” notes CEO & founder Ryan Pratt. “Another advantage is that these devices are fabricated in the US, aligning with the objectives of the CHIPS Act of 2022 and ensuring a robust, domestic supply chain for our customers.”
The GRF0020D and GRF0030D are available now for ordering, with samples ready for distribution. Pricing starts at $30 for 100-piece quantities. The bare dice are shipped in 2x2-inch waffle trays for safe transport and storage.
Guerrilla RF acquires GaN device portfolio from Gallium Semiconductor