Ab initio transfer length method simulations of tunneling limits in 2D semiconductors (opens in new tab)

As semiconductor devices approach the sub-2 nm technology node, identifying the fundamental quantum limits of contact-resistance scaling becomes imperative; however, the transition from thermionic emission to direct tunneling remains experimentally inaccessible and theoretically ill-defined. Herein, based on multi-space constrained-search density functional theory, which self-consistently treats carrier injection and diffusive transport physics under finite bias, we perform ab initio transfer...